Vitale, Wolfgang A.Tamagnone, MicheleMoldovan, Clara F.Emond, NicolasCasu, Emanuele A.Petit, LucaLe Drogoff, BorisChaker, MohamedMosig, Juan R.Ionescu, Adrian M.2016-10-242016-10-242016-10-24201610.1109/ESSDERC.2016.7599659https://infoscience.epfl.ch/handle/20.500.14299/130631WOS:000386655900085The abrupt metal-insulator transition in vanadium dioxide (VO2) offers novel performance and functionality for beyond CMOS switches, enabling simultaneous high ON current and ultra-steep subthreshold slope with low temperature dependence. We developed a field-enhanced design of 2-terminal VO2 switches that allows decreasing their actuation voltage without affecting their performance and reliability. Exploiting this design, we characterized VO2 switches with extremely abrupt transitions (< 1 mV/dec) until 60 degrees C and a reduction in actuation voltage up to 38.3% with respect to conventional devices.steep-slope switchvanadium dioxidemetal-insulator transitionactuation voltageField-enhanced design of steep-slope VO2 switches for low actuation voltagetext::conference output::conference proceedings::conference paper