Helman, NCRoth, JEAltug, HMiller, DABBour, DP2016-08-162016-08-162016-08-16200410.1109/LEOS.2004.1363312https://infoscience.epfl.ch/handle/20.500.14299/128710We present a quasi-waveguide angled facet electroabsorption modulator with a contrast ratio greater than 3 dB between 1496 nm and 1506 nm for 1 V drive as well as a misalignment tolerance of 30 mum.Low-voltage surface-normal InGaAsP/InP modulator for optical interconnectstext::conference output::conference proceedings::conference paper