Saeidi, AliJazaeri, FarzanStolichnov, IgorLuong, Gia VinhZhao, Qing-TaiMantl, SiegfriedIonescu, Mihai Adrian2017-10-212017-10-212017-10-21201710.23919/SNW.2017.8242270https://infoscience.epfl.ch/handle/20.500.14299/141533This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of Ion, gm, and overdrive are analyzed and explained by most effective reduction of body factor, m < 1, especially for VG>VT, which greatly amplify the control on the surface potential TFET, which dictates a highly non-linear BTBT regime. We achieve a full non-hysteretic negative-capacitance switch configuration, suitable for logic applications, and report on-current increase by a factor of 500x, voltage overdrive of 1V, transconductance increase of up to 5×103x, and subthreshold swing improvement.text::conference output::conference proceedings::conference paper