Salathe, R.Mohn, E.2009-01-202009-01-202009-01-20197110.1016/S0038-1101(71)80010-2https://infoscience.epfl.ch/handle/20.500.14299/33898On selected GaAs laser diodes, prepared by an epitaxial solution growth method, the temperature dependence of threshold current density and the net density gradient at the p-n junction have been measured. The relationship between these two parameters has been examined and compared with different theoretical results. Assuming a linearly graded doping profile in the junction region a good quantitative agreement is obtained between theory and the experimental resultsgallium arsenideIII-V semiconductorssemiconductor laserssemiconductor materialsdoping gradienttemperature dependencethreshold current densityGaAs laser diodesepitaxial solution growth methodtext::journal::journal article::research article