Vitale, Wolfgang AmadeusMoldovan, Clara FaustaTamagnone, MichelePaone, AntonioSchüler, AndreasIonescu, Adrian Mihai2015-07-162015-07-162015-07-16201510.1109/LED.2015.2454535https://infoscience.epfl.ch/handle/20.500.14299/116329WOS:000360273900033This work reports a detailed experimental investigation of the slope of the current switching between OFF and ON states exploiting the metal-insulator-transition in vanadium dioxide devices. The reported devices are CMOS compatible 2-terminal switches. We experimentally demonstrate for the first time the very little dependence on temperature of the steep slope of these switches, ranging from 0.24 mV/decade at room temperature, to 0.38 mV/decade at 50°C. The fabricated devices show excellent on-state conduction, with ION>1.8 mA/μm or Ron<3mΩ/μm, for the whole range of investigated temperatures (from room temperature to the MIT transition temperature), which recommends them as future candidates for steep-slope, highly conductive and temperature-stable switches.metal-insulator transitioncorrelated electron systemssteep-slope switchvanadium dioxidetext::journal::journal article::research article