Zhou, LinGonschorek, MarcusGiraud, EtienneFeltin, E.Carlin, J. F.Grandjean, NicolasSmith, David J.Mccartney, Martha R.2013-03-282013-03-282013-03-28201210.1063/1.4772633https://infoscience.epfl.ch/handle/20.500.14299/91115WOS:000312780000030GaN(Si)/AlInN multiple quantum wells were grown on GaN/Al2O3 (0001) templates by metalorganic vapor-phase epitaxy. Transmission electron microscopy observations showed well-defined GaN quantum wells and AlInN barrier layers. Electrostatic potential profiles across the heterostructure have been measured using off-axis electron holography. A polarization-induced electric field with magnitude of similar to 2.2 +/- 0.1 MV/cm was measured across the GaN quantum wells, in reasonable agreement with simulated values. However, the measured fields across the AlInN barriers were considerably less than predicted from simulations: possible reasons are briefly discussed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772633]text::journal::journal article::research article