Chauhan, Yogesh SinghGillon, RenaudDeclercq, MichelIonescu, Adrian Mihai2010-11-302010-11-302010-11-30200810.4103/0256-4602.44655https://infoscience.epfl.ch/handle/20.500.14299/60673WOS:000263798500003A detailed analysis of capacitance behavior of high-voltage MOSFET (HV-MOS), for example, LDMOS, using device simulation is made. The impact of lateral nonuniform doping and drift region are separately analyzed. It is shown that the peaks in C-GD and C-GS capacitances of HV-MOS originate from lateral nonuniform doping. The peak value of C-DG capacitance can be higher than WLCox for nonzero drain biases. The drift region decreases the C-GD capacitance and increases the peaks in C-GS in strong inversion and also gives rise to peaks in C-GG capacitances increasing with higher drain bias. It is also shown that trapped charge due to hot carrier injection modulates the peaks' amplitude and position in capacitances depending on hot hole or electron injection at drain or source side. This capacitance analysis will facilitate in optimization of the HV-MOS structure and also help in modeling of HV-MOS, including the hot carrier degradation.CapacitanceDrift regionHigh voltage MOSFETHot carrier injectionLateral nonuniform dopingLdmosVdmosDevicetext::journal::journal article::research article