Beckers, ArnoutJazaeri, FarzanRuffino, AndreaBruschini, ClaudioBaschirotto, AndreaEnz, Christian2017-10-252017-10-252017-10-25201710.1109/ESSDERC.2017.8066592https://infoscience.epfl.ch/handle/20.500.14299/141603This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundamental physical parameters of this technology at 300,77 and 4.2 K based on DC measurement results. The extracted values are then used to demonstrate the impact of cryogenic temperatures on the essential analog design parameters. We find that the simplified charge-based EKV model can accurately predict the cryogenic behavior. This represents a main step towards the design of analog/RF circuits integrated in an advanced bulk CMOS process and operating at cryogenic temperature for quantum computing control systems.MOSQUITOtext::conference output::conference proceedings::conference paper