Reduction of the boron cross-contamination for plasma deposition of p–i–n devices in a single-chamber large area radio-frequency reactor

Ballutaud, J.Bucher, C.Hollenstein, Ch.Howling, A. A.Kroll, U.Benagli, S.Shah, A.Buechel, A.2009-02-102009-02-10200410.1016/j.tsf.2004.05.034https://infoscience.epfl.ch/handle/20.500.14299/35084WOS:000224474500035In this article, a new treatment to reduce boron contamination of the interface between the p- and i- layer is presented. An ammonia flush, performed at 10 Pa for 1 min, after deposition of the p-layer considerably reduces the boron contamination at the p-i interface of amorphous silicon p-i-n solar cells prepared in a single-chamber reactor. This treatment avoids the need to move the substrate out of the reactor during the full deposition process of a solar cell, thereby reducing costs. The measurement of boron contamination depth profile in the i-layer was done by Secondary Ion Mass Spectroscopy and the effectiveness of the treatment was supported by quantum efficiency and I-V measurements of solar cells. © 2004 Elsevier B.V. All rights reserved.Reduction of the boron cross-contamination for plasma deposition of p–i–n devices in a single-chamber large area radio-frequency reactortext::journal::journal article::research article