5 MHz 2×2 optical switch in silicon on insulator technology using plasma dispersion effect

Dainesi, PaoloThévenaz, LucRobert, Philippe2008-09-292008-09-292008-09-29200110.1109/ECOC.2001.988852https://infoscience.epfl.ch/handle/20.500.14299/29963We report on a 2×2 SOI switch, based on the plasma dispersion effect, reaching 5 MHz of switching frequency. Measured insertion losses, extinction ratio and crosstalk at 1300 nm and 1550 nm are presented and discussed.optical switchessilicon-on-insulator5 MHz 2×2 optical switch in silicon on insulator technology using plasma dispersion effecttext::conference output::conference proceedings::conference paper