Bousse, L.van den Vlekkert, H. H.de Rooij, N. F.2009-05-122009-05-122009-05-12199010.1016/0925-4005(90)80018-Uhttps://infoscience.epfl.ch/handle/20.500.14299/39985Hysteresis in Al2O3 Gate ISFETstext::journal::journal article::research article