Dumcenco, DumitruOvchinnikov, DmitryLopez Sanchez, OriolGillet, PhilippeAlexander, Duncan T LLazar, SorinRadenovic, AleksandraKis, Andras2015-11-032015-11-032015-11-03201510.1088/2053-1583/2/4/044005https://infoscience.epfl.ch/handle/20.500.14299/120397We report on the growth of molybdenum disulphide (MoS2) using H2S as a gas-phase sulfur precursor that allows controlling the domain growth direction of domains in both vertical (perpendicular to the substrate plane) and horizontal (within the substrate plane), depending on the H2S:H2 ratio in the reaction gas mixture and temperature at which they are introduced during growth. Optical and atomic force microscopy measurements on horizontal MoS2 demonstrate the formation of monolayer triangular-shape domains that merge into a continuous film. Scanning transmission electron microscopy of monolayer MoS2 shows a regular atomic structure with a hexagonal symmetry. Raman and photoluminescence spectra confirm the monolayer thickness of the material. Field-effect transistors fabricated on MoS2 domains that are transferred onto Si/Si2 substrates show a mobility similar to previously reported exfoliated and chemical vapor deposition-grown materials. © 2015 IOP Publishing Ltd.MoS22D semiconductorsCVD growthtext::journal::journal article::research article