Mikulik, DmitryRicci, MariaTutuncuoglu, GozdeMatteini, FedericoVukajlovic, JelenaVulic, NatasaAlarcon-Llado, EstherFontcuberta I Morral, Anna2017-12-042017-12-042017-12-04201710.1016/j.nanoen.2017.10.016https://infoscience.epfl.ch/handle/20.500.14299/142601WOS:000415302600062The photonic properties of nanowires advocate for their utilization in next generation solar cells. Compared to traditional devices, the electric scheme is transformed from a single into an ensemble of pn junctions connected in parallel. This new configuration requires new schemes for the characterization. We show how conductive-probe atomic force microscopy, C-AFM, is an essential tool for the characterization and optimization of this parallel-connected nanowire devices. With C-AFM it is possible to obtain both surface topography and local electrical characterization with nanoscale resolution. We demonstrate topography and current mapping of nanowire forests, combined with current-voltage measurements of the individual nanowire junctions from the ensemble. Our results provide discussion elements on some factors limiting the performance of a nanowire-based solar cell and thereby to provide a path for their improvement.Next generation photovoltaicsNanowire-based solar cellsConductive-AFMIII-V semiconductorstext::journal::journal article::research article