Moreno-Garcia, DanielHowell, Kaitlin M.Villanueva, Luis Guillermo2025-01-252025-01-252025-01-252024-10-0110.1063/5.02205322-s2.0-85208287057https://infoscience.epfl.ch/handle/20.500.14299/244228Flexoelectricity, inherent in all materials, offers a promising alternative to piezoelectricity for nanoscale actuation and sensing. However, its widespread application faces significant challenges: differentiating flexoelectric effects from those of piezoelectricity and other phenomena, verifying its universality across all material structures and thicknesses, and establishing a comprehensive database of flexoelectric coefficients across different materials. This work introduces a groundbreaking methodology that accurately isolates flexoelectricity from piezoelectric, electrostrictive, and electrostatic effects, with a detection threshold extending below 1 fC/m. The robustness of this method is demonstrated through its application to amorphous hafnium oxide, successfully measuring a flexoelectric coefficient of 105 ± 10 pC/m. This measurement signifies the first measurement of flexoelectricity in hafnia, as well as in any amorphous material. In addition, the study compiles a list of published flexoelectric coefficients, revealing an important insight. The relationship between the flexoelectric coefficient and the material’s relative permittivity is better approximated by a quadratic proportionality. This challenges the traditional linear assumption proposed in Kogan’s work and opens new avenues for future research in flexoelectric materials.falseFlexoelectricity in amorphous hafnium oxide (HfO<inf>2</inf>)text::journal::journal article::research article