Termo, GennaroBorghello, GiulioFaccio, FedericoKloukina, KostasCaselle, MicheleElsenhans, Alexander FriedrichUluso, Ahmet CagriKoukab, AdilSallese, Jean-Michel2024-04-172024-04-172024-04-172024-03-0110.1088/1748-0221/19/03/C03039https://infoscience.epfl.ch/handle/20.500.14299/207259WOS:001189616700008The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon -On -Insulator (FDSOI) technology exposed to ultra -high total ionizing dose (TID) was investigated. Custom structures including n- and p -channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO2) with different back -gate bias configurations, from -8 V to 2 V. The investigation revealed that the performance is significantly affected by TID, with the radiation response being dominated by the charge trapped in the buried oxide.TechnologyInspection With X-RaysRadiation Damage To Electronic ComponentsRadiation-Hard Electronicstext::journal::journal article::research article