Piro, F.Allport, P.Asensi, I.Berdalovic, I.Bortoletto, D.Buttar, C.Cardella, R.Charbon, E.Dachs, F.Dao, V.Dobrijevic, D.Dyndal, M.Flores, L.Freeman, P.Gabrielli, A.Gonella, L.Kugathasan, T.LeBlanc, M.Oyulmaz, K.Pernegger, H.Riedler, P.van Rijnbach, M.Sandaker, H.Sharma, A.Solans, C.Snoeys, W.Suligoj, T.Torres, J.Worm, S.2022-07-042022-07-042022-07-042022-06-0110.1109/TNS.2022.3170729https://infoscience.epfl.ch/handle/20.500.14299/189039WOS:000812532100017In this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to achieve high detection efficiencies, is presented. The sensor features a small collection electrode to achieve a small capacitance (<5 fF) and allows full CMOS in-pixel circuitry. The circuit is implemented in the 180-nm CMOS imaging technology from the TowerJazz foundry and integrated into the MALTA2 chip, which is part of a development that targets the specifications of the outer pixel layer of the ATLAS Inner Tracker upgrade at the LHC. One of the main challenges for monolithic sensors is a radiation hardness up to 10(15) 1-MeV n(eq)/cm(2) non-ionizing energy loss (NIEL) and 80 Mrad total ionizing dose (TID) required for this application. Tests up to 3 . 10(15) 1-MeV n(eq)/cm(2) and 100 Mrad were performed on the MALTA2 sensor and front-end circuit, which still show good performance even after these levels of irradiation, promising for even more demanding applications such as the future experiments at the high-luminosity large hadron collider (HL-LHC).Engineering, Electrical & ElectronicNuclear Science & TechnologyEngineeringfront-end circuitsmonolithic active pixel sensors (mapss)pixel detectorsradiation hardnessactive pixel sensorsdetectorstext::journal::journal article::research article