Barbut, LucianJazaeri, FarzanBouvet, DidierSallese, Jean-Michel2013-08-072013-08-072013-08-072013https://infoscience.epfl.ch/handle/20.500.14299/93982This paper reports an alternative simple fabrication process for twin gate junctionless Vertical Slit Field Effect Transistors. N-type devices have been successfully manufactured on SOI substrates with a doping density 5×1018 atoms/cm3. The devices demonstrate up to six decades of Ion/Ioff ratio and a sub- threshold swing of 90 mV/decade relative to a slit width of approximately 10 nm.JunctionlessVeSFETtwin gatediffusiondopingphosphorousn-type transistorSOItitaniumtext::conference output::conference proceedings::conference paper