van der Wal, P. D.Briand, D.Mondin, G.Jenny, S.Jeanneret, S.Millon, C.Roussel, H.Dubourdieu, C.de Rooij, N. F.2009-05-122009-05-122009-05-12200410.1109/ICSENS.2004.1426257https://infoscience.epfl.ch/handle/20.500.14299/39994High-k Dielectrics for Use as ISFET Gate Oxidestext::conference output::conference proceedings::conference paper