Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

Saeidi, AliJazaeri, FarzanStolichnov, IgorLuong, G.V.Zhao, Q.T.Manti, S.Ionescu, Mihai Adrian2020-01-242020-01-242018-01-0110.23919/SNW.2017.8242270https://infoscience.epfl.ch/handle/20.500.14299/164909This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive are analyzed and explained by most effective reduction of body factor, m <; 1, especially for V G >V T , which greatly amplify the control on the surface potential TFET, which dictates a highly non-linear BTBT regime. We achieve a full non-hysteretic negative-capacitance switch configuration, suitable for logic applications, and report non-current increase by a factor of 500x, voltage overdrive of IV, transconductance increase of up to 5× 10 3 x, and subthreshold swing improvement.Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swingtext::conference output::conference proceedings::conference paper