Blattner, P.Naqvi, S. S. H.Ehbets, P.Herzig, H. P.2009-04-222009-04-222009-04-22199510.1016/0167-9317(94)00163-Ohttps://infoscience.epfl.ch/handle/20.500.14299/37653We investigated two optical methods for characterizing submicron structures. Average errors of a few nanometers can be determined by the far-field diffraction metrology utilizing diffractive structures having enhanced sensitivity to fabrication errors. The scanning spot metrology is well suited for analyzing lithographic masks. © 1995 Elsevier Science B.V. All rights reserved.text::journal::journal article::research article