Syrbu, A.V.Behrend, J.Fernandez, J.Carlin, J.F.Berseth, C.-A.Iakovlev, V.P.Rudra, A.Kapon, E.2008-02-292008-02-292008-02-29199810.1016/S0022-0248(98)00075-Xhttps://infoscience.epfl.ch/handle/20.500.14299/19619WOS:000074386800054Photoluminescence intensity and emission wavelength of InAsP/InGaAsP and InGaAs/InGaAsP multi-quantum well (MQW) laser structures grown by chemical beam epitaxy (CBE) at 460 degrees C and V/III ratio of 2 are considerably affected by annealing at temperatures 600-650 degrees C which prevents lasing of these structures fused on GaAs substrates. It is shown that the degradation of luminescence characteristics can be decreased by increasing the growth temperature to 480 degrees C and V/III ratio to 4. InAsP/InGaAsP and InGaAs/InGaAsP laser diodes on GaAs substrates have been obtained by localized wafer fusion at 650 degrees C.chemical beam epitaxywafer fusionphotoluminescence degradationdiode lasersQUANTUMtext::journal::journal article::research article