Ji, XinruLiu, YangQiu, ZheruSiddharth, AnatWang, Rui NingKim, TaegonOlson, Joseph C.Kippenberg, Tobias J.2025-01-262025-01-262025-01-25202410.1364/cleo_at.2024.am3j.22-s2.0-85215295661https://infoscience.epfl.ch/handle/20.500.14299/244810We demonstrate an integrated Erbium-based tunable laser using wafer-scale fabrication and ion implantation of silicon nitride photonic integrated circuits, and achieve single-frequency lasing tunable from 1530 nm to 1575 nm covering the entire optical C-band.falseC-bandElectro-optical waveguidesErbiumIntegrated opticsIon implantationLasersOptical device fabricationParticle beam opticsPhotonic integrated circuitsSilicon nitrideFull C-band tunable integrated Erbium lasers via wafer-scale fabricationtext::conference output::conference proceedings::conference paper