El Ghouli, SalimScheer, PatrickMinondo, MichelJuge, AndrePoiroux, ThierrySallese, Jean-MichelLallement, Christophe2016-10-182016-10-182016-10-18201610.1109/MIXDES.2016.7529697https://infoscience.epfl.ch/handle/20.500.14299/130013WOS:000383221700005Ultra-Thin Body and Box (UTBB) Fully-depleted Silicon-on-Insulator (FDSOI) MOSFETs exhibit very high transit frequency granting advantageous RF and low-power circuits design. This requires accurate models describing transistor behavior in all operating regimes including low levels of MOSFET channel inversion. In this paper, Leti-UTSOI based RF model will be compared against electrical measurements from 28nm FDSOI devices operating down to low bias conditions. The outcome demonstrates the accuracy and efficiency of Leti-UTSOI for low-power and RF applications design.FDSOIUTBBLeti-UTSOIAnalog and RFCompact ModelLow-powertext::conference output::conference proceedings::conference paper