Su, D. S.Zandbergen, H. W.Tiemeijer, P. C.Kothleitner, G.Hävecker, M.Hébert, C.Knop-Gericke, A.Freitag, B. H.Hoferd, F.Schlögl, R.2009-02-172009-02-172009-02-17200310.1016/S0968-4328(03)00033-7https://infoscience.epfl.ch/handle/20.500.14299/35364Using single crystal V2O5 as a sample, we tested the performance of the new aberration corrected GATAN spectrometer on a monochromatised 200 kV FEG FEI (S)TEM. The obtained V L and O K ELNES were compared with that obtained in a common GATAN GIF and that in the new spectrometer, without monochromatised beam. The performance of the new instrumentation is impressive: recorded with an energy-resolution of 0.22 eV, the V L3 edge reveals all the features due to the bulk electronic structure, that are also revealed in near-edge X-ray absorption fine structure (NEXAFS) with a much higher energy-resolution (0.08 eV). All features of the ELNES and NEXAFS are in line with a theoretical spectrum derived from band-structure calculations.Divanadium pentoxideDOSELNESEnergy-resolutionMonochromatorNear-edge X-ray absorption fine structureHigh resolution EELS using monochromator and high performance spectrometer: Comparison of V2O5 ELNES with NEXAFS and band structure calculationstext::journal::journal article::research article