Floriduz, AlessandroChoi, UihoMatioli, Elison2024-07-032024-07-032024-07-032024-06-0310.35848/1347-4065/ad5480https://infoscience.epfl.ch/handle/20.500.14299/209170WOS:001253525000001In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly grown on n-Si with a TMAl preflow not only present a better crystalline quality compared to the use of thin AlN buffers, but also exhibit orders-of-magnitude improvement in vertical current conduction between GaN and Si, thanks to the absence of highly resistive AlN layers. Our proposed technique opens a new pathway for the effective realization of fully-vertical GaN-on-Si devices.Physical SciencesMocvdGanFully-VerticalGan-On-SiPreflowtext::journal::journal article::research article