Moreno, P.Richard, M.Rossetti, M.Portella-Oberli, M.Li, L. H.Deveaud-Pledran, B.Fiore, A.2010-11-302010-11-302010-11-30200810.1021/nl073115ahttps://infoscience.epfl.ch/handle/20.500.14299/61537WOS:000253947400021We unveil the role of bound-to-continuum photoexcitation of carriers as a relevant process that affects the performance of quantum dot (OD) lasers. We present the response of an InAs/InGaAs QD laser to a sub-band gap pump, showing an unexpected depletion of the emitted photons. We relate this observation with carrier photoexcitation through additional transmission and photocurrent measurements. We provide a theoretical support to the experimental data and highlight the important role of this process in the laser characteristics.Semiconductor Optical AmplifiersUltrafast Switch-OffDark-Pulse FormationGainAbsorptionIntraband carrier photoexcitation in quantum dot laserstext::journal::journal article::research article