Han, Hung-ChiD'Amico, AntonioEnz, Christian2022-09-262022-09-262022-09-262022-01-0110.23919/MIXDES55591.2022.9838014https://infoscience.epfl.ch/handle/20.500.14299/190916WOS:000853346000006The work presents the comprehensive design-oriented EKV model for FDSOI technologies, including the backgate effects and geometry dependence. Despite its simplicity, the model correctly captures not only the dependence of the threshold voltage versus the back-gate voltage, but also the changes in the slope factor and low-field mobility. This results in a normalized transconductance efficiency that becomes independent of the back-gate voltage over a wide range. The model is validated thanks to the use of the Python-based automated parameter extraction tool on a 22nm FDSOI technology.Engineering, Electrical & ElectronicEngineeringfdsoig(m) / i-dback-gate effectinversion coefficientlow poweranalog designsoi-mosfetsmobilitychanneltext::conference output::conference proceedings::conference paper