Bonaldo, StefanoMattiazzo, SerenaEnz, ChristianBaschirotto, AndreaPaccagnella, AlessandroJin, XiaomingGerardin, Simone2019-06-182019-06-182019-06-182019-01-0110.1109/TNS.2018.2876943https://infoscience.epfl.ch/handle/20.500.14299/157872WOS:000457307300011In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width but also on the channel length. Short-channel pMOSFETs exhibit a higher TID tolerance compared to long ones. We attributed this effect to the presence of the halo implantations. For short-channel lengths, the drain halo can overlap the source one, increasing the average bulk doping along the channel. The higher bulk doping attenuates the radiation-induced degradation, improving the TID tolerance of short-channel transistors. The results are finally compared and discussed through technology computer-aided design simulations.Engineering, Electrical & ElectronicNuclear Science & TechnologyEngineering28-nm cmosbulk dopingcharge trappinghalohigh-k dielectricmosfetsradiation-induced narrow-channel effect (rince)shallow trench isolation (sti)threshold voltage shifttotal dose effectsradiationimpacttext::journal::journal article::research article