Collins, I. R.Moran, J. T.Andrews, P. T.Cosso, R.Omahony, J. D.McGilp, J. F.Margaritondo, G.2006-10-032006-10-032006-10-03199510.1016/0039-6028(94)00735-7https://infoscience.epfl.ch/handle/20.500.14299/234660WOS:A1995QH40900011Angle-resolved photoemission spectroscopy (ARPES), using HeI radiation, has been used to probe the occupied electronic states from a single domain of the Au-induced 5 x 2 reconstruction of Si(lll), a quasi-one-dimensional (quasi-1D) metallic system. The ARPES spectra recorded parallel (perpendicular) to the Au chain structure show a signature of a metallic (non-metallic) system. These experimental results are intriguing since, for the first time, spectral intensity at the Fermi level is observed in a photoemission study of a quasi-1D metallic system.ANGLE-RESOLVED PHOTOEMISSIONELECTRICAL TRANSPORTGOLDLOW-ENERGYELECTRON DIFFRACTION (LEED)METAL-SEMICONDUCTOR INTERFACESPHOTOELECTRON EMISSIONSILICONSURFACE ELECTRONIC PHENOMENASURFACERELAXATION AND RECONSTRUCTIONVICINAL SINGLE CRYSTAL SURFACESSPECTRAL-FUNCTIONSURFACESENERGYSURFACESAngle-Resolved Photoemission from an Unusual Quasi-One-Dimensional Metallic System - a Single-Domain Au-Induced 5x2 Reconstruction of Si(111)text::journal::journal article::research article