1/f Noise in Fully Integrated Electrolytically Gated FinFETs with Fin Width Down to 20nm

Martens, KoenDu Bois, BertKong Siew, YongGupta, AnshulVeloso, AnabelaDupuy, EmmanuelRadisic, DunjaAltamirano Sanchez, EfrainVan Roy, WillemSeveri, SimoneSimoen, Eddy2019-08-212019-08-212019-08-21201910.5075/epfl-ICLAB-ICNF-269192https://infoscience.epfl.ch/handle/20.500.14299/1600381/f Noise in Fully Integrated Electrolytically Gated FinFETs with Fin Width Down to 20nmtext::conference output::conference paper not in proceedings