Vukajlovic-Plestina, J.Kim, W.Ghisalberti, L.Varnavides, G.Tuetuencuoglu, G.Potts, H.Friedl, M.Gueniat, L.Carter, W. C.Dubrovskii, V. G.Fontcuberta i Morral, A.2019-03-022019-03-022019-03-022019-02-2010.1038/s41467-019-08807-9https://infoscience.epfl.ch/handle/20.500.14299/155005WOS:000459097100004III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is necessary. Here, we propose a mechanism which gives a clear route for maximizing the nanowire yield in the self-catalyzed growth fashion. It is widely accepted that growth of nanowires occurs on a layerby-layer basis, starting at the triple-phase line. Contrary to common understanding, we find that vertical growth of nanowires starts at the oxide-substrate line interface, forming a ring-like structure several layers thick. This is granted by optimizing the diameter/height aspect ratio and cylindrical symmetry of holes, which impacts the diffusion flux of the group V element through the well-positioned group III droplet. This work provides clear grounds for realistic integration of III-Vs on silicon and for the organized growth of nanowires in other material systems.Multidisciplinary SciencesScience & Technology - Other Topicsindium-phosphide nanowiresgaas nanowirescrystal phasegrowthnucleationgoldtext::journal::journal article::research article