Mereuta, AlexandruNechay, KostiantynCaliman, AndreiSurucean, GrigoreGallo, PascalGuina, MirceaKapon, Eli2019-07-022019-07-022019-07-022019-01-0110.1117/12.2508342https://infoscience.epfl.ch/handle/20.500.14299/158721WOS:000471823700001Optically-pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55-mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlAs distributed Bragg reflectors, which were incorporated in a linear and a V-cavity configurations. A maximum output power of 3.65 W was achieved for a heatsink temperature of 11 degrees C and employing a 2.2% output coupler. The laser exhibited circular beam profiles for the full emission power range. The demonstration represents more than 10-fold increase of the output power compared to state-of-the-art flip-chip VECSELs previously demonstrated at the 1.55-mu m wavelength range, and opens a new perspective for developing practical VECSEL-based laser system for applications such as LIDAR, spectroscopy, communications and distributed sensing.Engineering, Electrical & ElectronicOpticsPhysics, AppliedEngineeringPhysicssemiconductor lasersoptically-pumped vecselswafer-fusionhigh-poweroutput powersemiconductor-laseroperationnmtext::conference output::conference proceedings::conference paper