Descoeudres, A.Barraud, L.Bartlome, R.Choong, G.De Wolf, StefaanZicarelli, F.Ballif, C.2010-11-182010-11-182010-11-18201010.1063/1.3511737https://infoscience.epfl.ch/handle/20.500.14299/57812WOS:000283934100075In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells, yielding aperture efficiencies up to 20.3% on 4 cm2Microcrystalline SiliconCrystalline SiliconSolar-CellsPlasmasSpectroscopyRfDepositionTransitionPhysicstext::journal::journal article::research article