Felici, MarcoPettinari, GiorgioCarron, RomainLavenuta, GiovannaTartaglini, ElenaPolimeni, AntonioFekete, DanGallo, PascalDwir, BenjaminRudra, AlokChristianen, Peter C. M.Maan, Jan C.Capizzi, MarioKapon, Eli2012-05-112012-05-112012-05-11201210.1103/PhysRevB.85.155319https://infoscience.epfl.ch/handle/20.500.14299/80230WOS:000303116000001The properties of single site-controlled InGaAsN quantum wires (QWRs)-both untreated and irradiated with atomic hydrogen-are probed by micro-magnetophotoluminescence spectroscopy. The strong anisotropy of the diamagnetic shift measured for different orientations of the applied magnetic field confirms the one-dimensional nature of the QWR carrier wave function. In addition, the strain reduction associated with N incorporation is found to promote a larger indium intake in the QWR, enabling the realization of site-controlled QWRs emitting at long (>= 1.3 mu m), technologically relevant wavelengths.Polarization AnisotropyDotsPhotoluminescenceLaserHeterostructuresSemiconductorsNanocavityDefectWellsMagneto-optical properties of single site-controlled InGaAsN quantum wires grown on prepatterned GaAs substratestext::journal::journal article::research article