Lattanzio, LivioDe Michielis, LucaIonescu, Adrian M.2012-01-192012-01-192012-01-19201110.1109/ESSDERC.2011.6044185https://infoscience.epfl.ch/handle/20.500.14299/76785We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher drive currents when compared to a lateral p-i-n junction TFET. The device principle and performances are studied by 2D numerical simulations. Output and transfer characteristics, as well as the impact of back gate bias, silicon thickness and gate length on the device behavior are evaluated. Near ideal average subthreshold slope (SSavg ~ 12 mV/dec over 6 decades of current) and Ion/Ioff >; 10^8 at Vd = Vg = 0.5 V figures of merit are obtained, due to the OFF-ON binary transition which leads to the abrupt onset of the band-to-band tunneling inside the silicon channel. Drive current (Ion) in the EHBTFET is 3× higher that in traditional all-Si Tunnel FET but below 0.1 μA/μm.Computational modelingFilmsJunctionsLogic gatesSiliconSolidsTunnelingelemental semiconductorsfield effect transistorsp-i-n diodessilicontunnel transistorstunnelling2D numerical simulationsEHBTFETOFF-ON binary transitionSiTFET conceptback gate biasband-to-band tunnelingbias-induced electron-hole bilayercarrier tunnelingdevice behaviordevice principledrive currentselectron-hole bilayer TFETelectron-hole bilayer tunnel FETgate lengthideal average subthreshold slopeimproved ON currentlateral p-i-n junction TFETsilicon channelsilicon thicknesssteep subthreshold swingtransfer characteristicstunnel field-effect transistor conceptFP7 STEEPERtext::conference output::conference proceedings::conference paper