Growth-mode induced defects in epitaxial SrTiO3 thin films grown on single crystal LaAlO3 by a two-step PLD process

Su, DongYamada, TomoakiGysel, RomanTagantsev, Alexander K.Muralt, PaulSetter, NavaJiang, Nan2011-08-112011-08-112011-08-11201110.1557/jmr.2010.82https://infoscience.epfl.ch/handle/20.500.14299/69983WOS:000292826200006We grew epitaxial SrTiO3 (STO) thin films on (001) LaAlO3 substrates via a two-step procedure using pulsed laser deposition and studied them with transmission electron microscopy in plane-view and cross-sectional samples. We found that partial misfit dislocations are the main interfacial defects, whereas planar defects are the main defects in STO films. Our results suggest that a three-dimensional island mode dominates the growth of the STO film.Dielectric-PropertiesInternal-StressesMicrostructureDislocationSubstrateFerroelectricityRelaxationGrowth-mode induced defects in epitaxial SrTiO3 thin films grown on single crystal LaAlO3 by a two-step PLD processtext::journal::journal article::research article