Ell, C.Prineas, J.Nelson, T. R. Jr.Park, S.Gibbs, H. M.Khitrova, G.Koch, S. W.Houdré, R.2007-08-312007-08-312007-08-31199810.1109/IQEC.1998.680117https://infoscience.epfl.ch/handle/20.500.14299/11315Summary form only given. Radiative coupling between one or more quantum wells (QWs) and the single-cavity mode of a moderate reflectivity semiconductor microcavity leads to normal-mode coupling (NMC), observed as a doubled-peaked spectrum in reflection, transmission, or photoluminescence. Recent studies show that the excitonic response of microcavities depends very sensitively on structural disorder, e.g., influencing the NMC peak linewidths. A full treatment of the interplay of QW structural disorder, the attractive Coulomb interaction of electron-hole pairs, and the radiative coupling effects upon the optical response of real structures is a very complex task. We demonstrate here that the problem of disorder in a QW system can be isolated by carefully measuring the disorder-averaged optical susceptibility of a InGaAs multiple quantum well.excitons-gallium-arsenideIII-V-semiconductorsindium-compoundsmicro-opticsnonlinear-optical-susceptibilityoptical-resonatorsreflectivity-semiconductor-quantum-wellsdisorder-averaged-excitonic-responsenormal-mode-couplingsemiconductor-microcavitieslinear-dispersion-theoryradiative-couplingsingle-cavity-modemoderate-reflectivity-semiconductor-microcavitydoubled-peaked-spectrumphotoluminescence-transmission-reflection-excitonic-responsemicrocavities-NMC-peak-linewidthsQW-structural-disorderattractive-Coulomb-interactionelectron-hole-pairsoptical-responsedisorder-averaged-optical-susceptibility-measurementmultiple-quantum-wellInGaAs-text::conference output::conference proceedings::conference paper