94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Marti, DiegoTirelli, StefanoTeppati, ValeriaLugani, LorenzoCarlin, Jean-FrancoisMalinverni, MarcoGrandjean, NicolasBolognesi, C. R.2015-02-202015-02-202015-02-20201510.1109/Led.2014.2367093https://infoscience.epfl.ch/handle/20.500.14299/111337WOS:000347045200007We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power density of 1.35 W/mm and peak power-added-efficiency of 12% are measured at 94 GHz. The devices exhibit a dc maximum current drain density of 1.6 A/mm and a peak transconductance of 650 mS/mm. In small-signal operation, cutoff frequencies f(T/fMAX) = 141/232 GHz are achieved. The large-signal performance of our AlInN/GaN HEMTs on silicon at 94 GHz stills lags the best reported results one on SiC substrates but nevertheless confirms the tremendous interest of GaN-on-Si HEMT technology for low-cost millimeter-wave electronic applications.AlInN/GaN on SiHEMTslarge-signalload-pull characterization94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contactstext::journal::journal article::research article