Almeida, J.Sirigu, L.Margaritondo, G.Da Padova, P.Quaresima, C.Perfetti, P.2006-10-032006-10-032006-10-03199910.1088/0022-3727/32/3/002https://infoscience.epfl.ch/handle/20.500.14299/234791WOS:000078628800002We report x-ray photoelectron spectroscopy experimental results on band offsets at Ge/Si(100)2 x 1 interfaces grown by hydrogen and Sb-surfactant mediated epitaxy. For Ge deposited at 400 degrees C in Si(100)2 x 1, the valence band discontinuity was of 0.72 +/- 0.07 eV. Using atomic hydrogen and a Sb-monolayer mediated growth, we obtained values of 0.75 +/- 0.07 and 0.69 +/- 0.07 eV. Our data show that the surfactant Ge layer strain induced effects on the modification of band offsets are surprisingly negligible.PHOTOEMISSION SPECTRAGEHYDROGENSPECTROSCOPYSURFACTANTSSI(001)STATESGROWTHSYSTEMLAYERtext::journal::journal article::research article