O'Connor, IanCantan, MayeulMarchand, CedricVilquin, BertrandSlesazeck, StefanBreyer, Evelyn T.Mulaosmanovic, HalidMikolajick, ThomasGiraud, BastienNoel, Jean-PhilippeIonescu, AdrianStolichnov, Igor2019-06-182019-06-182019-06-182018-01-0110.1109/VLSI-SoC.2018.8644809https://infoscience.epfl.ch/handle/20.500.14299/157971WOS:000462970000038Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy-efficiency and allow flexibility for finer grain logic and memory. This paper will describe the basics of ferroelectric devices for both hysteretic (non-volatile memory) and negative capacitance (steep slope switch) devices, and then project how these can be used in low-power logic cell architectures and fine-grain logic-in-memory (LiM) circuits.Engineering, Electrical & ElectronicEngineeringferroelectric devicesnon-volatile memorysteep slope switchlow-power logiclogic-in-memorytext::conference output::conference proceedings::conference paper