Dainesi, P.Thévenaz, LucFluckiger, Ph.Hibert, C.Racine, G.Robert, Ph.Renaud, Ph.Ionescu, A.M.Declercq, M.2005-10-192005-10-19200110.1109/SOIC.2001.958024https://infoscience.epfl.ch/handle/20.500.14299/218029This paper reports on a novel, simple yet reliable, unbalanced SOI Mach-Zehnder (M-Z) interferometer architecture based on 1.2 μm CMOS process and adapted post-processing for the waveguide sidewalls. The fabricated electro-optical device is based on multiple PIN diode bars integrated on top of a SOI silicon waveguide and can be operated either at: (I) high-frequency (few MHz) based on the plasma dispersion effect and (II) low frequency (<1 MHz) based on the thermo-optic effect. The device main characteristics and figures of merit are presented and discussed.CMOS integrated circuitselectro-optical deviceselectro-optical filtersintegrated optoelectronicsMach-Zehnder interferometersoptical communication equipmentoptical fabricationp-i-n photodiodessilicon-on-insulatorthermo-optical effectsCMOS SOI unbalanced Mach-Zehnder interferometerdesignsimulationsfabricationcharacterizationadapted post-processingwaveguide sidewallselectro-optical devicemultiple PIN diode barsSOI silicon waveguidehigh frequencyplasma dispersion effecttelecommunication applicationslow frequencythermo-optic effectdevice main characteristicsfigures of merit1.2 micronSitext::conference output::conference proceedings::conference paper