Leitao, P. VicenteRinella, G. AglieriBugiel, S.Cecconi, L.de Melo, J. L. A.De Robertis, G.Deng, W.Martin, A. DordaDorosz, P.Fang, X.Gajanana, D.Gromov, V.Hodges, A.Hong, G. H.Kremastiotis, I.Kugathasan, T.Loddo, F.Marras, D.Matthew, S.Morel, F.Piro, F.Pulli, A.Sedgwick, I.Snoeys, W.Soudier, J.Valin, I.Yelkenci, A.2023-04-102023-04-102023-04-102023-01-0110.1088/1748-0221/18/01/C01044https://infoscience.epfl.ch/handle/20.500.14299/196886WOS:000948372200013The MOnolithic Stitched Sensor (MOSS) is a development prototype chip towards the ITS3 vertexing detector for the ALICE experiment at the LHC. Designed using a 65 nm CMOS Imaging technology, it aims at profiting from the stitching technique to construct a single-die monolithic pixel detector of 1.4 cm x 26 cm. The MOSS prototype is one of the prototypes developed within the CERN-EP R , D framework to learn how to make stitched wafer-scale sensors with satisfactory yield. This contribution will describe some of the design challenges of a stitched pixel sensor , the techniques adopted during the development of this prototype.Instruments & InstrumentationInstruments & Instrumentationsolid state detectorsvlsi circuitstext::journal::journal article::research article