Kohli, MarkusHuang, YuhongMaeder, ThomasWuethrich, ChristianBell, AndrewMuralt, PaulSetter, NavaRyser, PeterForster, Martin2006-08-212006-08-212006-08-21199510.1016/0167-9317(95)00122-0https://infoscience.epfl.ch/handle/20.500.14299/233266WOS:A1995TP60800018Pyroelectric PbTiO3 thin films devices with two temperature compensating elements on a SiO2/Si3N4 membranes have been fabricated and characterized. The measured voltage responsivity as a function of radiation modulation frequency has been compared to finite element model calculation. The relevant film properties have been compared for sputter and a sol-gel deposition techniques. The calculated responsivity amounts to 30 V/W. The measured pyroelectric signal is a few mu V.Processing and properties of thin film pyroelectric devicestext::journal::journal article::research article