Moselund, K. E.Pott, V.Bouvet, D.Ionescu, A. M.2009-07-152009-07-152009-07-15200810.1109/VTSA.2008.4530780https://infoscience.epfl.ch/handle/20.500.14299/41342WOS:000256564900009This work reports for the first time on a cascadable NMOS inverter based on punch-through impact ionization MOSFET (PIMOS) integrated on a single body-tied silicon wire. The PIMOS device acts as a single-transistor-latch and shows abrupt current switching (3-10 mV/dec.) as well as hysteresis in both $I_D(V_{DS})$ and $I_D(V_{GS})$. An inverter gain as high as -80 and a 300 mV hysteresis width in the transfer characteristics are reported at room temperature. Temperature stability of the devices up to 125degC and operation for more than $10^4$ cycles without significant degradation are demonstrated, much beyond the performances of previously reported I-MOS device.MIS devicesMOSFETinvertorsPIMOS devicehysteretic inverter-on-a-body-tied-wirepunch-through impact ionization MOSFETsingle-transistor-latchtext::conference output::conference proceedings::conference paper