820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2

Khadar, Riyaz AbdulLiu, ChaoZhang, LiyangXiang, PengCheng, KaiMatioli, Elison2018-01-172018-01-172018-01-17201810.1109/LED.2018.2793669https://infoscience.epfl.ch/handle/20.500.14299/144278820 V GaN-on-Si Quasi-Vertical P-i-N Diodes with BFOM of 2.0 GW/cm2text::journal::journal article::research article