Kis, AndrasRadisavljevic, Branimir2015-09-222015-09-222015-09-222012https://infoscience.epfl.ch/handle/20.500.14299/118370Semiconductor device comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2.patentUS9608101US2014197459EP2661775WO201209336045812813