Chen, WeiPasquarello, Alfredo2017-09-052017-09-052017-09-05201710.1103/PhysRevB.96.020101https://infoscience.epfl.ch/handle/20.500.14299/140230WOS:000405021400001The accuracy of GW in the determination of defect energy levels is assessed through calculations on a set of well-characterized point defects in semiconductors: the As antisite in GaAs, the substitutional Mg in GaN, the interstitial C in Si, the Si dangling bond, and the Si split-vacancy complex in diamond. We show that the GW scheme achieves a reliable description of charge transition levels, but the overall accuracy is comparable to that of hybrid-functional calculations.text::journal::journal article::research article