Najmzadeh, MohammadBouvet, DidierGrabinski, WladyslawIonescu, Mihai Adrian2011-10-142011-10-142011-10-14201110.1109/DRC.2011.5994458https://infoscience.epfl.ch/handle/20.500.14299/71592In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ~400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.SNSF NanowireSi nanowireGate-All-AroundLocal stressorCMOS boosterUniaxial tensile strainStrained SiElastic local bucklingCarrier mobility enhancementHigh temperature performance MOSFETScattering mechanism in nanoscaleAccumulation-ModeHighly doped operation regimetext::conference output::conference proceedings::conference paper