Fazan, PierreOkhonin, Serguei2017-06-132017-06-132017-06-132003https://infoscience.epfl.ch/handle/20.500.14299/138377The device has a semiconductor layer provided on an insulating layer and including source and drain (18,20) regions to define a body (22) region of respective field effect transistors. An energy band modifying unit modifies the valence and conduction band of the body region to increase the amount of electrical charge that can be temporarily stored in the region. An Independent claim is also included for a method of controlling a semiconductor device.patentUS7514748US7061050US2006006468CN1647283US2004238890WO03088322EP1357603EP1357603AU2003226646AU2003226646WO03088322EP135536128459621