2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Ma, JunMatioli, Elison2018-02-272018-02-272018-02-27201810.1063/1.5012866https://infoscience.epfl.ch/handle/20.500.14299/1450602 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage currenttext::journal::journal article::research article